Recent advances in Sb-based midwave-infrared lasers

Author

Hasenberg, T.C. ; Miles, R.H. ; Kost, A.R. ; West, L.

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

Volume

33

Issue

8

fYear

1997

fDate

8/1/1997 12:00:00 AM

Firstpage

1403

Lastpage

1406

Abstract

Several midwave-infrared (MWIR) lasers have been demonstrated, including 2.8-, 3.1-, 3.2-, 3.4-, 4.1-, and 4.3-μm diodes. The devices utilize multiple-quantum-well (MQW) active regions in which the quantum wells (QW´s) consist of InAs-GaInSb broken-gap superlattices (BGSL´s). InGaAsSb barrier layers separate the BGSL wells, and InAs-AlSb superlattices are employed as cladding layers. We have observed pulsed laser operation up to 255 K with 3.2-μm devices. Typical pulsed output powers for these devices at 200 K are over 50 mW

Keywords

III-V semiconductors; gallium compounds; indium compounds; laser beams; laser variables measurement; quantum well lasers; semiconductor heterojunctions; semiconductor superlattices; 2.8 mum; 200 K; 255 K; 3.1 mum; 3.2 mum; 3.4 mum; 4.1 mum; 4.3 mum; 50 mW; InAs-AlSb; InAs-AlSb superlattices; InAs-GaInSb; InGaAsSb; InGaAsSb barrier layers; Sb-based lasers; broken-gap superlattices; cladding layers; midwave-infrared lasers; multiple-quantum-well active regions; pulsed laser operation; pulsed output powers; quantum wells; Chemical lasers; Diodes; Laser theory; Laser tuning; Quantum well devices; Quantum well lasers; Radiative recombination; Spontaneous emission; Superlattices; Temperature;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.605563

Filename

605563