Comparison of effects between large-area-beam ELA and SPC on TFT characteristics

Author

Noguchi, Takashi ; Tang, Andrew J. ; Tsai, Julie A. ; Reif, Rafael

Author_Institution

Microsyst. Technol. Lab., MIT, Cambridge, MA, USA

Volume

43

Issue

9

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

1454

Lastpage

1458

Abstract

Thin film transistors (TFTs) with channel dimensions between 0.5 μm and 5 μm were fabricated using a low-temperature process of 600°C with single-shot excimer laser annealing (ELA) having a large-area beam of 45×45 mm². The uniformity in device characteristics across the ELA-treated region was studied. As the channel size decreases, TFT performance and their uniformity for ELA devices were superior compared to those formed with solid phase crystallization (SPC). The superior characteristics by ELA can be explained by the resulting grains with higher crystallinity. TFTs fabricated using ELA having a uniform beam are promising candidates for future LCD peripheral circuits on inexpensive glass and for LSI

Keywords

MOSFET; excimer lasers; laser beam annealing; thin film transistors; 0.5 to 5 micron; 600 C; LCD peripheral circuits; LSI; Si; TFT characteristics; grains; large-area-beam annealing; low-temperature process; single-shot excimer laser annealing; solid phase crystallization; thin film transistors; Annealing; Crystallization; Laser beams; Optical beams; Optical pulses; Semiconductor films; Silicon; Switches; Temperature distribution; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.535332

Filename

535332