Title :
Electrical measurement of electron and hole mobilities as a function of injection level in silicon
Author :
Bellone, Salvatore ; Persiano, Giovanni Vito ; Strollo, Antonio G M
Author_Institution :
Dept. of Inf. & Electr. Eng., Salerno Univ., Italy
fDate :
9/1/1996 12:00:00 AM
Abstract :
The first experimental method to separately measure the hole and the electron mobilities as a function of the injection level is presented. The carrier mobilities are extracted from impulsive measurements of the resistance associated with a n+-ν-n + (p+-π-p+) structure, where the conductivity of the intermediate layer is controlled by the injection of an incorporated p-n junction diode. Two-dimensional numerical simulation is used to assess the accuracy of the proposed measurement technique. Experimental results obtained at room temperature on both n-type and p-type materials are presented and compared to existing analytical mobility models
Keywords :
electric variables measurement; electron mobility; elemental semiconductors; hole mobility; silicon; Si; carrier mobilities; electrical measurement; electron mobility; hole mobility; impulsive measurements; injection level; measurement technique; n-type material; n+-ν-n+ structure; p-n junction diode; p-type material; p+-π-p+ structure; resistance; two-dimensional numerical simulation; Charge carrier processes; Conductivity measurement; Diodes; Electric resistance; Electric variables measurement; Electrical resistance measurement; Electron mobility; Measurement techniques; Numerical simulation; P-n junctions;
Journal_Title :
Electron Devices, IEEE Transactions on
