• DocumentCode
    1355731
  • Title

    Simulation of PNP InAlAs/InGaAs heterojunction bipolar transistors

  • Author

    Shi, S. ; Roenker, K.P. ; Kumar, T. ; Cahay, M.M. ; Stanchina, William E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA
  • Volume
    43
  • Issue
    9
  • fYear
    1996
  • fDate
    9/1/1996 12:00:00 AM
  • Firstpage
    1466
  • Lastpage
    1467
  • Abstract
    The performance of single heterojunction InAlAs/InGaAs PNP heterojunction bipolar transistors is modeled numerically and good agreement is found with experimental measurements. Peak experimental values of fT=14 GHz, fMax=22 GHz, β=170 and U=38 dB are obtained near a collector current density of 104 A/cm2 for a nonoptimized device
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; simulation; 14 GHz; 22 GHz; InAlAs-InGaAs; PNP device; heterojunction bipolar transistors; model; p-n-p HBT; Acoustic scattering; Circuit simulation; Current density; Heterojunction bipolar transistors; Indium gallium arsenide; Material properties; Numerical models; Optical buffering; Optical scattering; Stimulated emission;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.535334
  • Filename
    535334
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1355731