• DocumentCode
    1355811
  • Title

    Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics

  • Author

    Rao, V. Ramgopal ; Sharma, D.K. ; Vasi, J.

  • Author_Institution
    Dept. of Electr. Eng., Indian Inst. of Technol., Bombay, India
  • Volume
    43
  • Issue
    9
  • fYear
    1996
  • fDate
    9/1/1996 12:00:00 AM
  • Firstpage
    1467
  • Lastpage
    1470
  • Abstract
    In this study we report for the first time results on neutral electron trap generation in reoxidised nitrided oxide dielectrics under various radiation doses and bias conditions and compare the results with the conventional oxides. We see very little electron trap creation in RNO dielectrics for radiation doses up to 5 Mrad (Si) and for bias fields up to ±2.5 MV/cm. We explain our results in RNO and oxide dielectrics using a three step defect creation model
  • Keywords
    MOS capacitors; dielectric thin films; electron traps; nitridation; oxidation; radiation effects; 5 Mrad; MOS capacitor; ONO gate dielectric; RNO dielectrics; SiO2-Si3N4-SiO2; bias conditions; irradiation; neutral electron trap generation; reoxidized nitrided gate dielectrics; three step defect creation model; Annealing; Boron; Dielectrics and electrical insulation; Electron traps; MOS capacitors; Nitrogen; Semiconductor device modeling; Silicon; Thickness control; Ultra large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.535335
  • Filename
    535335
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1355811