Title :
First demonstration of single-layer InAs/InP (100) quantum-dot laser: continuous wave, room temperature, ground state
Author :
Kotani, J. ; van Veldhoven, P.J. ; de Vries, T. ; Smalbrugge, B. ; Bente, E.A.J. ; Smit, Meint K. ; Notzel, R.
Author_Institution :
COBRA Res. Inst. on Commun. Technol., Eindhoven Univ. of Technol., Eindhoven, Netherlands
Abstract :
Reported is the first InAs/lnP (100) quantum-dot (QD) laser operating in continuous-wave mode at room temperature on the QD ground state transition employing a single-layer of QDs grown by metal organic vapour phase epitaxy. The necessary high QD density is achieved by growing the QDs on a thin InAs quantum well (QW). These QDs on the QW laser exhibit a high slope efficiency and a lasing wavelength of 1.74 ??m, which is important for biomedical applications.
Keywords :
indium compounds; quantum dot lasers; quantum well lasers; vapour phase epitaxial growth; InAs-InP; biomedical applications; continuous-wave mode; ground state transition; high slope efficiency; lasing wavelength; metal organic vapour phase epitaxy; quantum well; quantum-dot laser; room temperature; single-layer InAs/InP;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.2558
