• DocumentCode
    1355870
  • Title

    Mid-IR lasing from highly tensile-strained, type II, GaInAs/GaSb quantum wells

  • Author

    Gassenq, A. ; Taliercio, Thierry ; Cerutti, L. ; Baranov, A.N. ; Tournie, E.

  • Author_Institution
    Inst. d´Electron. du Sud (IES), Univ. Montpellier 2, Montpellier, France
  • Volume
    45
  • Issue
    25
  • fYear
    2009
  • Firstpage
    1320
  • Lastpage
    1321
  • Abstract
    Laser diodes based on a novel active zone, namely type II Ga0.50In0.50As/GaSb quantum wells where the Ga0.50In0.50As layers are under high tensile strain (3.9 %), have been investigated. Broad area diodes lased up to room temperature in the pulsed regime. Laser emission is centred at ~2.3 ??m, a technologically important wavelength, with a threshold-current density of 1.6 kA/cm2 and a characteristic temperature T0 = 50=K.
  • Keywords
    III-V semiconductors; gallium compounds; quantum well lasers; GaInAs-GaSb; broad area diodes; highly tensile strained; laser diodes; laser emission; mid-IR lasing; quantum wells; type II;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.2207
  • Filename
    5353358
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1355870