Title :
Mid-IR lasing from highly tensile-strained, type II, GaInAs/GaSb quantum wells
Author :
Gassenq, A. ; Taliercio, Thierry ; Cerutti, L. ; Baranov, A.N. ; Tournie, E.
Author_Institution :
Inst. d´Electron. du Sud (IES), Univ. Montpellier 2, Montpellier, France
Abstract :
Laser diodes based on a novel active zone, namely type II Ga0.50In0.50As/GaSb quantum wells where the Ga0.50In0.50As layers are under high tensile strain (3.9 %), have been investigated. Broad area diodes lased up to room temperature in the pulsed regime. Laser emission is centred at ~2.3 ??m, a technologically important wavelength, with a threshold-current density of 1.6 kA/cm2 and a characteristic temperature T0 = 50=K.
Keywords :
III-V semiconductors; gallium compounds; quantum well lasers; GaInAs-GaSb; broad area diodes; highly tensile strained; laser diodes; laser emission; mid-IR lasing; quantum wells; type II;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.2207
