DocumentCode :
1355891
Title :
Improved derivative superposition scheme for simultaneous second- and third-order distortion cancellation in LNAs
Author :
Parvizi, Mahdi ; Nabavi, A.
Author_Institution :
Microelectron. Lab., Tarbiat Modares Univ., Tehran, Iran
Volume :
45
Issue :
25
fYear :
2009
Firstpage :
1323
Lastpage :
1325
Abstract :
An improved derivative superposition (IDS) scheme is examined for low-noise amplifier (LNA) linearisation, which utilises PMOS as an auxiliary FET in weak inversion for simultaneous second- and third-order distortion cancellation in wideband LNAs. The performance of a LNA with IDS is compared to that of a LNA with conventional derivative superposition (CDS) and common-source (CS) cascode LNA with the same power consumption. Simulation results show that the proposed LNA has nearly the same IIP3 as the LNA by CDS linearisation and 7 dB improvement compared to the CS LNA. Further, it has more than 20 dB improvement in IIP2. While the gain and noise figure of the proposed LNA are nearly unaffected, it only needs 0.2% extra power.
Keywords :
MOSFET; distortion; field effect transistors; interference suppression; low noise amplifiers; wideband amplifiers; IIP3; PMOS; auxiliary FET; common-source cascode LNA; improved derivative superposition scheme; low-noise amplifier; noise figure; power consumption; simultaneous second order distortion cancellation; third-order distortion cancellation; wideband LNA;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2009.1921
Filename :
5353360
Link To Document :
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