Title :
InP DHBT-based 1:2 DEMUX IC operating at up to 120 Gbit/s
Author :
Makon, R.E. ; Driad, Rachid ; Losch, R. ; Rosenzweig, J. ; Schlechtweg, Michael ; Ambacher, Oliver
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Abstract :
A 1:2 demultiplexer (DEMUX) circuit has been successfully designed and manufactured using high-speed InP/InGaAs DHBT technology. The 1:2 DEMUX features proper operation at data rates up to 120 Gbit/s. At this data rate, a minimum eye opening of 150 mVpp is required at the data input of the IC for generating 60 Gbit/s output data with impeccable eye opening and a voltage swing of 530 mVpp.
Keywords :
III-V semiconductors; demultiplexing; demultiplexing equipment; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; integrated optoelectronics; optical receivers; semiconductor heterojunctions; InP-InGaAs; bit rate 120 Gbit/s; bit rate 60 Gbit/s; data input; data rate; demultiplexer circuit; double heterojunction bipolar transistors; high-speed DHBT technology; minimum eye opening; output data; voltage 150 mV; voltage 530 mV; voltage swing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.2459
