Title :
AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current
Author :
Nanjo, T. ; Takeuchi, Masaru ; Imai, A. ; Suita, M. ; Oishi, Tsukasa ; Abe, Y. ; Yagyu, E. ; Kurata, T. ; Tokuda, Yoko ; Aoyagi, Y.
Author_Institution :
Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Amagasaki, Japan
Abstract :
The buffer layer in AlGaN channel HEMTs to suppress the off-state drain leakage current is investigated. By employing an AlN for the buffer layer in Al0.39Ga0.61N/Al0.16Ga0.84N HEMTs, the off-state drain leakage current was sufficiently suppressed and the breakdown voltage was enhanced. It was considered that employing the AlN for the buffer layer is important for extracting the superior material properties of the AlGaN in the channel layer.
Keywords :
aluminium compounds; electric breakdown; high electron mobility transistors; leakage currents; wide band gap semiconductors; AlGaN; AlN; breakdown voltage; buffer layer; channel HEMT; channel layer; high electron mobility transistors; low off-state drain leakage current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.2711
