Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisation

Author

Lu, C.-Y. ; Chang, Edward Yi ; Huang, Jui-Che ; Chang, Chao-Tsun ; Lee, Ching-Ting

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

45

Issue

25

fYear

2009

Firstpage

1348

Lastpage

1349

Abstract

An AlGaN/GaN high electron mobility transistor (HEMT) with tungsten nitride (WN_x) Schottky gate fabricated on a sapphire substrate is presented. Gate forward current stress was chosen to evaluate the stability of the Schottky gate. After stress, this WN_x HEMT remains stable, while the conventional Ni/Au HEMT shows performance degradation and failure. The maximum output power density from this device is 5 W/mm at 2 GHz. A combination of these findings indicates the robust performance of this WN_x material and its potential as a Schottky gate for AlGaN/GaN HEMTs.

Keywords

Schottky gate field effect transistors; UHF field effect transistors; aluminium compounds; gallium compounds; gold; high electron mobility transistors; nickel; semiconductor device metallisation; tungsten compounds; wide band gap semiconductors; AlGaN-GaN; HEMT; Ni-Au; Schottky gate stability; WN_x; frequency 2 GHz; gate forward current stress; gate metallisation; high electron mobility transistors; sapphire substrate;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2009.1643

Filename

5353376