Total Dose Effects on the Performance of Irradiated Capacitorless MSDRAM Cells

Author

El-Mamouni, Farah ; Bawedin, Maryline ; Zhang, Enxia X. ; Schrimpf, Ronald D. ; Fleetwood, Daniel M. ; Cristoloveanu, Sorin

Author_Institution

Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA

Volume

57

Issue

6

fYear

2010

Firstpage

3054

Lastpage

3059

Abstract

The impact of total ionizing dose (TID) is reported on irradiated capacitorless metastable dip RAM (MSDRAM) cells, built in a planar SOI technology. The memory window shifts toward more negative voltages at higher doses. The unconventional gate current peak measured in MSDRAM cells decreases with dose and disappears at 500 krad(SiO₂) for these devices. The retention time of the 0-state decreases with dose, with the greatest decrease for memory cells programmed with high back-gate voltages. The trapped charge in the 400-nm buried oxide changes the potential in the body and interferes with the ability to store a 0-state. The irradiated cells exhibit higher drain currents while reading the 1-state. This increase of the drain current is enhanced for longer programming times.

Keywords

dosimetry; electric current measurement; nuclear electronics; random-access storage; silicon-on-insulator; 0-state retention time; drain current; gate current; high back-gate voltage; irradiated capacitorless metastable dip RAM cells; memory window shift; planar SOI technology; total ionizing dose effect; Current measurement; Electric potential; Electron traps; Hysteresis; Logic gates; Radiation effects; Silicon on insulator technology; 1T-DRAM; MSDRAM; band-to-band tunneling (BTBT); body potential; buried oxide (BOX); fully depleted (FD); metastable dip (MSD) effect; retention time; silicon-on-insulator (SOI); total ionizing dose (TID);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2010.2077310

Filename

5605643