Title :
Carrier correlation effects in a quantum-well semiconductor laser medium
Author :
Chow, W.W. ; Knorr, A. ; Hughes, S. ; Girndt, A. ; Koch, S.W.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
4/1/1997 12:00:00 AM
Abstract :
This paper describes the results of a microscopic treatment of carrier-carrier scattering effects in the optical gain and refractive index spectra of a quantum-well semiconductor laser structure. The approach uses the Semiconductor Maxwell Bloch equations to describe the interaction between the carriers and the laser field, in the presence of many-body Coulomb interactions. Coulomb correlation effects are treated at the level of quantum kinetic theory in the Markovian limit. This approach shows the presence of nondiagonal Coulomb correlation contributions, in addition to the familiar diagonal contributions giving rise to polarization dephasing
Keywords :
amplification; collision processes; electron correlations; electron-phonon interactions; laser theory; many-body problems; potential scattering; quantum well lasers; refractive index; semiconductor device models; Coulomb correlation effects; Markovian limit; carrier correlation effects; carrier laser field interaction; carrier-carrier scattering effects; many-body Coulomb interactions; microscopic treatment; nondiagonal Coulomb correlation contributions; optical gain spectra; polarization dephasing; quantum kinetic theory; quantum-well semiconductor laser medium; refractive index spectra; semiconductor Maxwell Bloch equations; Laser theory; Maxwell equations; Optical microscopy; Optical refraction; Optical scattering; Optical variables control; Particle scattering; Quantum well lasers; Refractive index; Semiconductor lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.605645
