Strain-overcompensated GaInP-AlGaInP quantum-well laser structures for improved reliability at high-output powers

Author

Valster, A. ; Meney, A.T. ; Downes, J.R. ; Faux, D.A. ; Adams, A.R. ; Brouwer, A.A. ; Corbijn, A.J.

Author_Institution

Philips Optoelectron. Res., Eindhoven, Netherlands

Volume

3

Issue

2

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

180

Lastpage

187

Abstract

Strain-overcompensated multiple-quantum-well (MQW) laser structures have been analyzed theoretically as well as experimentally for the first time. Strain overcompensation reduces the bandgap shrinkage that normally takes place at the facets of compressively strained layers because of strain relaxation. This results in a lower absorption of the laser spot leading to a remarkable improvement of the reliability of high-power laser diodes

Keywords

III-V semiconductors; aluminium compounds; compensation; gallium compounds; indium compounds; internal stresses; laser reliability; quantum well lasers; semiconductor device reliability; stress relaxation; GaInP-AlGaInP; GaInP-AlGaInP quantum-well laser structures; MQW laser structures; bandgap shrinkage; compressively strained layers; high-output powers; high-power laser diodes; laser spot absorption; reliability; strain overcompensation; strain relaxation; Capacitive sensors; Diode lasers; Laser theory; Mirrors; Photonic band gap; Power generation; Quantum well lasers; Semiconductor lasers; Temperature; Zinc;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.605653

Filename

605653