Title :
Strain-overcompensated GaInP-AlGaInP quantum-well laser structures for improved reliability at high-output powers
Author :
Valster, A. ; Meney, A.T. ; Downes, J.R. ; Faux, D.A. ; Adams, A.R. ; Brouwer, A.A. ; Corbijn, A.J.
Author_Institution :
Philips Optoelectron. Res., Eindhoven, Netherlands
fDate :
4/1/1997 12:00:00 AM
Abstract :
Strain-overcompensated multiple-quantum-well (MQW) laser structures have been analyzed theoretically as well as experimentally for the first time. Strain overcompensation reduces the bandgap shrinkage that normally takes place at the facets of compressively strained layers because of strain relaxation. This results in a lower absorption of the laser spot leading to a remarkable improvement of the reliability of high-power laser diodes
Keywords :
III-V semiconductors; aluminium compounds; compensation; gallium compounds; indium compounds; internal stresses; laser reliability; quantum well lasers; semiconductor device reliability; stress relaxation; GaInP-AlGaInP; GaInP-AlGaInP quantum-well laser structures; MQW laser structures; bandgap shrinkage; compressively strained layers; high-output powers; high-power laser diodes; laser spot absorption; reliability; strain overcompensation; strain relaxation; Capacitive sensors; Diode lasers; Laser theory; Mirrors; Photonic band gap; Power generation; Quantum well lasers; Semiconductor lasers; Temperature; Zinc;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.605653
