DocumentCode :
1356285
Title :
Lasing characteristics of self-formed quantum-dot lasers with multistacked dot layer
Author :
Shoji, Hajime ; Nakata, Yoshiaki ; Mukai, Kohki ; Sugiyama, Yoshihiro ; Sugawara, Mitsuru ; Yokoyama, Naoki ; Ishikawa, Hiroshi
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Volume :
3
Issue :
2
fYear :
1997
fDate :
4/1/1997 12:00:00 AM
Firstpage :
188
Lastpage :
195
Abstract :
Room-temperature continuous-wave (CW) operation at the ground state has been achieved in self-formed quantum-dot lasers with multistacked dot layer. By systematic investigation, discontinuous shifts of lasing wavelength from the high-order subbands to the ground state are clearly demonstrated for the first time by varying the number of dot layers and the cavity loss. Lasers oscillating at different subbands exhibit different behaviors against temperature both in the spectral characteristics and in the threshold currents, which are strongly related to emission efficiency of quantum dots and thermal excitation of carriers to higher order subbands. High characteristic temperature over 300 K has been achieved in a laser with high-reflection coating on both facets in the temperature range 60-200 K. Future prospects of improvement in the laser characteristics are also discussed
Keywords :
current density; electroluminescence; ground states; laser cavity resonators; laser transitions; quantum well lasers; semiconductor quantum dots; spectral line shift; 300 K; 60 to 200 K; CW; cavity loss; discontinuous shifts; dot layers; emission efficiency; facets; ground state; high characteristic temperature; high-order subbands; high-reflection coating; higher order subbands; lasing characteristics; lasing wavelength; multistacked dot layer; room-temperature continuous-wave operation; self-formed quantum-dot lasers; spectral characteristics; thermal excitation; threshold currents; Epitaxial growth; Land surface temperature; Laser theory; Physics; Quantum dot lasers; Quantum dots; Semiconductor lasers; Stationary state; Threshold current; US Department of Transportation;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/2944.605654
Filename :
605654
Link To Document :
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