Title :
Integrated RF and microwave components in BiCMOS technology
Author :
Burghartz, Joachim N. ; Soyuer, Mehmet ; Jenkins, Keith A.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
9/1/1996 12:00:00 AM
Abstract :
This paper presents and discusses an approach to exploit conventional BiCMOS technology for monolithic integration of RF & microwave systems. Several components, which are important elements of RF and microwave circuit design and which are not available in current BiCMOS, are described and characterized. The results for integrated spiral inductors in particular show that obvious limitations in comparison to compound semiconductor technology or hybrid configurations can be overcome to a large extent by utilizing the structural design options given with VLSI silicon integration technology
Keywords :
BiCMOS integrated circuits; MOS capacitors; VLSI; inductors; integrated circuit design; power integrated circuits; varactors; BiCMOS technology; RF components; VLSI; circuit design; microwave components; spiral inductors; structural design options; BiCMOS integrated circuits; Circuit synthesis; Inductors; Integrated circuit technology; Microwave technology; Monolithic integrated circuits; Radio frequency; Silicon; Spirals; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
