The double-sided floating-surface detector: an enhanced charge-detection architecture for CCD image sensors

Author

Roks, Edwin ; Centen, Peter G M ; Bosiers, Jan T. ; Huinink, Wim F.

Author_Institution

Philips Imaging Technol., Philips Res. Lab., Eindhoven, Netherlands

Volume

43

Issue

9

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

1583

Lastpage

1591

Abstract

A new high speed, low noise, nondestructive charge detector, called the Double-Sided Floating-Surface Detector (DS-FSD), which is fabricated in a standard CCD image sensor process, is reported. This detector can be integrated in CCD image sensors and is capable of detecting large charge packets at very low noise levels. Typical values are 5-8 noise electrons (within a bandwidth of 5 MHz) for a charge packet size of 100000 to 250000 electrons. The detector is used as the first MOS transistor in a three-stage source-follower configuration with a bandwidth of 150 MHz. The performance of both the traditional Floating-Surface Detector and Double-Sided Floating-Surface Detector (DSFSD) are calculated using a new, simple, model, This model is experimentally verified

Keywords

CCD image sensors; dark conductivity; semiconductor device models; semiconductor device noise; thermal noise; 150 MHz; CCD image sensors; charge packets; charge-detection architecture; double-sided floating-surface detector; noise levels; nondestructive charge detector; semiconductor device models; three-stage source-follower configuration; Bandwidth; Capacitance; Charge coupled devices; Charge-coupled image sensors; Clocks; Detectors; Electrons; MOSFETs; Noise level; Roentgenium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.535352

Filename

535352