Title :
A Novel Charge-Imbalance Termination for Trench Superjunction VDMOS
Author :
Qian, Qinsong ; Sun, Weifeng ; Zhu, Jing ; Liu, Siyang
Author_Institution :
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
Abstract :
A novel charge-imbalance termination region for high-voltage trench superjunction (SJ) vertical diffused MOSFETs (SJ-VDMOSs) is proposed and discussed in this letter. Its breakdown characteristics are investigated theoretically and experimentally. A simple and meaningful analytical-solution method is proposed, and it agrees with the simulation and experimental results. As a result, the novel imbalance termination can suppress the edge-drift potential more effectively than the conventional one in the off state. When the trench SJ-VDMOS was compared with a conventional termination structure of the same size, the device improved the breakdown voltage (BV) by about 8% using the proposed termination structure. Experimentally, a BV of 715 V was obtained in the trench SJ-VDMOS with a 35-μm trench on a 45-μm epitaxial layer and a 90- μm termination region.
Keywords :
MOSFET; semiconductor device breakdown; SJ-VDMOS; breakdown characteristics; breakdown voltage; charge-imbalance termination; edge-drift potential; high-voltage trench superjunction vertical diffused MOSFET; voltage 715 V; Analytical models; Doping; Electric breakdown; Electric potential; MOSFETs; Neodymium; Silicon; Breakdown voltage (BV); imbalance; superjunction (SJ); termination region;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2076406
