DocumentCode :
1356822
Title :
Transistor wars
Author :
Ahmed, Khaled ; Schuegraf, Klaus
Volume :
48
Issue :
11
fYear :
2011
fDate :
11/1/2011 12:00:00 AM
Firstpage :
50
Lastpage :
66
Abstract :
Intel announced the most dramatic change to the architecture of the transistor since the device was invented. The company will henceforth build its transistors in three dimensions, a shift that-if all goes well-should add at least a half dozen years to the life of Moore´s Law, the biennial doubling in transistor density that has driven the chip industry for decades. But Intel´s big announcement was notable for another reason: It signaled the start of a growing schism among chipmakers. Despite all the great advantages of going 3-D, a simpler alternative design is also nearing production. Although it´s not yet clear which device architecture will win out, what is certain is that the complementary metal-oxide semiconductor (CMOS) field-effect transistor (FET)-the centerpiece of computer processors since the 1980s-will get an entirely new look. And the change is more than cosmetic; these designs will help open up a new world of low-power mobile electronics with fantastic capabilities.
Keywords :
CMOS integrated circuits; MOSFET; low-power electronics; three-dimensional integrated circuits; 3D transistor; CMOS; FINFET; Intel; Moore´s Law; alternative design; complementary metal-oxide semiconductor field-effect transistor; computer processor; low-power mobile electronics; transistor architecture; CMOS technology; Computer architecture; FETs; Silicon on insulator technology; Three dimensional displays; Transistors;
fLanguage :
English
Journal_Title :
Spectrum, IEEE
Publisher :
ieee
ISSN :
0018-9235
Type :
jour
DOI :
10.1109/MSPEC.2011.6056626
Filename :
6056626
Link To Document :
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