Author :
Ahmed, Khaled ; Schuegraf, Klaus
fDate :
11/1/2011 12:00:00 AM
Abstract :
Intel announced the most dramatic change to the architecture of the transistor since the device was invented. The company will henceforth build its transistors in three dimensions, a shift that-if all goes well-should add at least a half dozen years to the life of Moore´s Law, the biennial doubling in transistor density that has driven the chip industry for decades. But Intel´s big announcement was notable for another reason: It signaled the start of a growing schism among chipmakers. Despite all the great advantages of going 3-D, a simpler alternative design is also nearing production. Although it´s not yet clear which device architecture will win out, what is certain is that the complementary metal-oxide semiconductor (CMOS) field-effect transistor (FET)-the centerpiece of computer processors since the 1980s-will get an entirely new look. And the change is more than cosmetic; these designs will help open up a new world of low-power mobile electronics with fantastic capabilities.
Keywords :
CMOS integrated circuits; MOSFET; low-power electronics; three-dimensional integrated circuits; 3D transistor; CMOS; FINFET; Intel; Moore´s Law; alternative design; complementary metal-oxide semiconductor field-effect transistor; computer processor; low-power mobile electronics; transistor architecture; CMOS technology; Computer architecture; FETs; Silicon on insulator technology; Three dimensional displays; Transistors;
Journal_Title :
Spectrum, IEEE
DOI :
10.1109/MSPEC.2011.6056626