Short-Cavity Long-Wavelength VCSELs With Modulation Bandwidths in Excess of 15 GHz

Author

Müller, M. ; Hofmann, W. ; Böhm, G. ; Amann, M.-C.

Author_Institution

Walter Schottky Inst., Tech. Univ. Munchen, Garching, Japan

Volume

21

Issue

21

fYear

2009

Firstpage

1615

Lastpage

1617

Abstract

InP-based buried tunnel junction vertical-cavity surface-emitting lasers (VCSELs) incorporating a novel short-cavity (SC) design are presented. These highly single-mode devices emitting at 1.55 mum show record-high modulation bandwidths in excess of 15 GHz together with greatly enhanced intrinsic resonance frequencies. For elevated temperatures of 65degC and 80degC, 3-dB-modulation bandwidths beyond 13 and 10 GHz are demonstrated, respectively. Reasons for the improved modulation behavior are the smaller intrinsic damping due to reduced photon-lifetime, and the better heat-management of these SC-VCSELs.

Keywords

III-V semiconductors; indium compounds; laser beams; laser cavity resonators; laser modes; optical design techniques; optical modulation; surface emitting lasers; InP; buried tunnel junction vertical-cavity surface-emitting laser; enhanced intrinsic resonance frequency; intrinsic damping; modulation bandwidth; reduced photon-lifetime; short-cavity design; short-cavity long-wavelength VCSEL; single-mode device; temperature 65 degC; temperature 80 degC; wavelength 1.55 mum; InP; optical communications; semiconductor lasers; vertical-cavity surface-emitting laser (VCSEL);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2009.2030781

Filename

5223550