Title :
Superhigh-power picosecond optical pulses from Q-switched diode laser
Author :
Portnoi, E.L. ; Venus, G.B. ; Khazan, A.A. ; Gadjiev, I.M. ; Shmarcev, A.Yu. ; Frahm, J. ; Kuhl, D.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
4/1/1997 12:00:00 AM
Abstract :
Generation of 40-ps optical pulses was demonstrated with a peak power of up to 45 W in a single mode and of up to 380 W from a broad-area laser diode. Such optical power was achieved in the Q-switching regime by means of a saturable absorber formed inside the laser cavity by deep implantation of heavy ions
Keywords :
Q-switching; high-speed optical techniques; ion implantation; laser cavity resonators; laser modes; optical saturable absorption; semiconductor lasers; 380 W; 40 ps; 45 W; Q-switched diode laser; broad-area laser diode; heavy ion deep implantation; laser cavity; optical power; optical pulse generation; peak power; saturable absorber; single mode; superhigh-power picosecond optical pulses; Diode lasers; Laser modes; Optical design; Optical pulse generation; Optical pulses; Optical resonators; Power lasers; Pump lasers; Semiconductor lasers; Venus;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.605666
