Analysis of n-channel MOS-controlled thyristors

Author

Huang, Q. ; Amaratunga, A. G J ; Narayanan, E.M.S. ; Milne, I. W I

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

38

Issue

7

fYear

1991

fDate

7/1/1991 12:00:00 AM

Firstpage

1612

Lastpage

1618

Abstract

The turn-off of the n-channel MOS-controlled thyristor (NMCT) is analyzed using two-dimensional simulation. A lateral NMOS-controlled thyristor structure, LNMCT, suitable for HVIC application is also proposed. It is found that the operation of a parasitic lateral n-p-n transistor in NMCT-type structures degrades the forward voltage drop and the turn-off capability and hence should be suppressed. The maximum controllable current in the NMCT is not only a function of internal parameters, but also depends on external supply voltage. This indicates that snubberless operation of an MCT-type device is not feasible. The advantages and disadvantages of the NMCT are compared with those of conventional MCT structures. The LNMCT turn-off speed is limited by the large amount of holes existing in the substrate, resulting in a turn-off waveform similar to that of an LIGBT

Keywords

equivalent circuits; metal-insulator-semiconductor devices; semiconductor device models; thyristors; HVIC application; MOS-controlled thyristors; forward voltage drop; lateral NMOS-controlled thyristor; maximum controllable current; n-channel; parasitic lateral n-p-n transistor; turn-off capability; two-dimensional simulation; Anodes; Bipolar transistors; Current density; Equivalent circuits; Insulated gate bipolar transistors; MOS devices; MOSFETs; Switches; Thyristors; Voltage control;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.85157

Filename

85157