Title :
Breakdown voltage enhancement for devices on thin silicon layer/silicon dioxide film
Author :
Nakagawa, Akio ; Yasuhara, Norio ; Baba, Yoshiro
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fDate :
7/1/1991 12:00:00 AM
Abstract :
Studies of high-voltage lateral device structures on a thin silicon layer over silicon dioxide have been carried out. It was found both theoretically and experimentally that over 600-V devices can be realized using a structure consisting of an n diffusion layer over a 15-μm-thick high-resistivity n- silicon layer over 3-μm silicon dioxide (SOI). A method is presented to enhance breakdown voltage by applying a large share of the voltage to the bottom oxide
Keywords :
electric breakdown of solids; integrated circuit technology; power integrated circuits; semiconductor-insulator boundaries; 600 V; SOI; Si-SiO2; breakdown voltage; high-resistivity n- Si layer; high-voltage lateral device structures; n diffusion layer; Breakdown voltage; Dielectric devices; Dielectric materials; Dielectric substrates; Diodes; Earth; Filling; Semiconductor films; Silicon compounds; Silicon on insulator technology;
Journal_Title :
Electron Devices, IEEE Transactions on
