DocumentCode
1357183
Title
Breakdown voltage enhancement for devices on thin silicon layer/silicon dioxide film
Author
Nakagawa, Akio ; Yasuhara, Norio ; Baba, Yoshiro
Author_Institution
Toshiba Corp., Kawasaki, Japan
Volume
38
Issue
7
fYear
1991
fDate
7/1/1991 12:00:00 AM
Firstpage
1650
Lastpage
1654
Abstract
Studies of high-voltage lateral device structures on a thin silicon layer over silicon dioxide have been carried out. It was found both theoretically and experimentally that over 600-V devices can be realized using a structure consisting of an n diffusion layer over a 15-μm-thick high-resistivity n- silicon layer over 3-μm silicon dioxide (SOI). A method is presented to enhance breakdown voltage by applying a large share of the voltage to the bottom oxide
Keywords
electric breakdown of solids; integrated circuit technology; power integrated circuits; semiconductor-insulator boundaries; 600 V; SOI; Si-SiO2; breakdown voltage; high-resistivity n- Si layer; high-voltage lateral device structures; n diffusion layer; Breakdown voltage; Dielectric devices; Dielectric materials; Dielectric substrates; Diodes; Earth; Filling; Semiconductor films; Silicon compounds; Silicon on insulator technology;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.85162
Filename
85162
Link To Document