Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAs metal-insulator-semiconductor-like (MIS) structure for multiple-valued logic applications

Author

Liu, Wen-Chau ; Laih, Lih-Wen ; Lour, Wen-Shiung ; Tsai, Jun-Hui ; Lin, Kun-Wei ; Cheng, Chin-Chum

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

32

Issue

9

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

1615

Lastpage

1619

Abstract

A new GaAs-In_xGa_1-xAs metal-insulator-semiconductor-like (MIS) device with the interesting dual-route and multiple-negative-differential-resistance (MNDR) current-voltage (I-V) characteristics has been fabricated and demonstrated. These performances are caused by the successive barrier lowering and potential redistribution effect. A novel multiple-route I-V characteristic is obtained in the studied device at low temperature (-130°C). This performance is different from the previously reported NDR switching device and has not yet been found in other devices. The interesting property of the studied structure provides a promising candidate for switching device applications

Keywords

III-V semiconductors; MIS devices; gallium arsenide; indium compounds; logic devices; multivalued logic; negative resistance devices; semiconductor switches; -130 C; GaAs-InGaAs; GaAs-InGaAs MIS structure; MNDR switching device; barrier lowering; low temperature; multiple negative differential resistance; multiple-route current-voltage characteristics; multiple-valued logic; potential redistribution; Anodes; Cathodes; Helium; Logic devices; Metal-insulator structures; Microwave devices; Molecular beam epitaxial growth; Ocean temperature; Substrates; Voltage;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.535366

Filename

535366