Title :
Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAs metal-insulator-semiconductor-like (MIS) structure for multiple-valued logic applications
Author :
Liu, Wen-Chau ; Laih, Lih-Wen ; Lour, Wen-Shiung ; Tsai, Jun-Hui ; Lin, Kun-Wei ; Cheng, Chin-Chum
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
9/1/1996 12:00:00 AM
Abstract :
A new GaAs-InxGa1-xAs metal-insulator-semiconductor-like (MIS) device with the interesting dual-route and multiple-negative-differential-resistance (MNDR) current-voltage (I-V) characteristics has been fabricated and demonstrated. These performances are caused by the successive barrier lowering and potential redistribution effect. A novel multiple-route I-V characteristic is obtained in the studied device at low temperature (-130°C). This performance is different from the previously reported NDR switching device and has not yet been found in other devices. The interesting property of the studied structure provides a promising candidate for switching device applications
Keywords :
III-V semiconductors; MIS devices; gallium arsenide; indium compounds; logic devices; multivalued logic; negative resistance devices; semiconductor switches; -130 C; GaAs-InGaAs; GaAs-InGaAs MIS structure; MNDR switching device; barrier lowering; low temperature; multiple negative differential resistance; multiple-route current-voltage characteristics; multiple-valued logic; potential redistribution; Anodes; Cathodes; Helium; Logic devices; Metal-insulator structures; Microwave devices; Molecular beam epitaxial growth; Ocean temperature; Substrates; Voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
