Noise equivalent circuit of a two-mode semiconductor laser with the contribution of both the linear and the nonlinear gain

Author

Bich-Ha, Tran Thi ; Mollier, Jean-Claude

Author_Institution

ENSAE, Toulouse, France

Volume

3

Issue

2

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

304

Lastpage

308

Abstract

An equivalent circuit model of a semiconductor laser diode and its MDS (microwave and RF design systems) implementation are described that allow a straightforward calculation of the noise characteristics of a laser diode combined with electronic components. This noise equivalent circuit model that is derived from the two-mode rate equations including both the self-saturation and cross-saturation contributions to the nonlinear gain and Langevin noise sources demonstrates the influence of the sl demode on the low-frequency relative intensity noise (RIN) enhancement

Keywords

equivalent circuits; laser modes; laser noise; laser theory; optical saturation; optical transmitters; semiconductor device models; semiconductor device noise; semiconductor lasers; Langevin noise sources; MDS implementation; cross-saturation contributions; electronic components; linear gain; low-frequency relative intensity noise enhancement; microwave and RF design systems implementation; noise characteristics; noise equivalent circuit; noise equivalent circuit model; nonlinear gain; quivalent circuit model; self-saturation; semiconductor laser diode; sl demode; two-mode rate equations; two-mode semiconductor laser; Circuit noise; Diode lasers; Equivalent circuits; Laser modes; Laser noise; Low-frequency noise; Masers; Radio frequency; Semiconductor device noise; Semiconductor lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.605671

Filename

605671