Title :
Analytic Model for Undoped Symmetric Double-Gate MOSFETs With Small Gate-Oxide-Thickness Asymmetry
Author :
Chang, Sheng ; Wang, Gaofeng ; Huang, Qijun ; Wang, Hao
Author_Institution :
Inst. of Microelectron. & Inf. Technol., Wuhan Univ., Wuhan, China
Abstract :
In this paper, an analytic model for undoped symmetric double-gate MOSFETs with small gate-oxide-thickness asymmetry is presented by virtue of a perturbation approach. Various effects on the MOSFET performance caused by small asymmetric departure from the nominal gate oxide thickness due to process variations and uncertainties are studied. This analytic solution can be used in compact models for IC designs.
Keywords :
MOSFET; IC designs; nominal gate oxide thickness; perturbation approach; small gate-oxide-thickness asymmetry; undoped symmetric double-gate MOSFET; Analog integrated circuits; Circuit synthesis; Digital integrated circuits; Information technology; Integrated circuit modeling; MOSFETs; Microelectronics; Nanoscale devices; Potential well; Uncertainty; Analytic solution; double-gate (DG) MOSFET; gate-oxide-thickness asymmetry; surface potential;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2028379
