DocumentCode :
1357536
Title :
High-Speed CMOS Integrated Optical Receiver With an Avalanche Photodetector
Author :
Youn, Jin-Sung ; Kang, Hyo-Soon ; Lee, Myung-Jae ; Park, Kang-Yeob ; Choi, Woo-Young
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
Volume :
21
Issue :
20
fYear :
2009
Firstpage :
1553
Lastpage :
1555
Abstract :
We present a high-speed monolithically integrated optical receiver fabricated with 0.13-mum standard complementary metal-oxide-semiconductor (CMOS) technology. The optical receiver consists of a CMOS-compatible avalanche photodetector (CMOS-APD) and a transimpedance amplifier (TIA). The CMOS-APD provides high responsivity as well as large bandwidth. Its bandwidth is further enhanced by the TIA having negative capacitance, which compensates undesired parasitic capacitance. With the CMOS integrated optical receiver, 4.25-Gb/s optical data are successfully transmitted with a bit-error rate less than 10-12 at the incident optical power of - 5.5 dBm.
Keywords :
CMOS integrated circuits; avalanche photodiodes; integrated optoelectronics; operational amplifiers; optical receivers; photodetectors; CMOS integrated optical receiver; avalanche photodetector; bit rate 4.25 Gbit/s; complementary metal oxide semiconductor technology; monolithically integrated optical receiver; parasitic capacitance; size 0.13 mum; transimpedance amplifier; Avalanche photodetectors (APDs); complementary metal–oxide–semiconductor (CMOS) integrated optical receiver; transimpedance amplifier (TIA);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2029869
Filename :
5223697
Link To Document :
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