High-Speed CMOS Integrated Optical Receiver With an Avalanche Photodetector

Author

Youn, Jin-Sung ; Kang, Hyo-Soon ; Lee, Myung-Jae ; Park, Kang-Yeob ; Choi, Woo-Young

Author_Institution

Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea

Volume

21

Issue

20

fYear

2009

Firstpage

1553

Lastpage

1555

Abstract

We present a high-speed monolithically integrated optical receiver fabricated with 0.13-mum standard complementary metal-oxide-semiconductor (CMOS) technology. The optical receiver consists of a CMOS-compatible avalanche photodetector (CMOS-APD) and a transimpedance amplifier (TIA). The CMOS-APD provides high responsivity as well as large bandwidth. Its bandwidth is further enhanced by the TIA having negative capacitance, which compensates undesired parasitic capacitance. With the CMOS integrated optical receiver, 4.25-Gb/s optical data are successfully transmitted with a bit-error rate less than 10^-12 at the incident optical power of - 5.5 dBm.

Keywords

CMOS integrated circuits; avalanche photodiodes; integrated optoelectronics; operational amplifiers; optical receivers; photodetectors; CMOS integrated optical receiver; avalanche photodetector; bit rate 4.25 Gbit/s; complementary metal oxide semiconductor technology; monolithically integrated optical receiver; parasitic capacitance; size 0.13 mum; transimpedance amplifier; Avalanche photodetectors (APDs); complementary metal–oxide–semiconductor (CMOS) integrated optical receiver; transimpedance amplifier (TIA);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2009.2029869

Filename

5223697