Title :
Reliability study on 50-100-mW CW operation of 680-nm visible laser diodes with a window-mirror structure
Author :
Shima, Akihiro ; Tada, Hitoshi ; Motoda, Takashi ; Tsugami, Mari ; Utakouji, Takeshi ; Higuchi, Hideyo
Author_Institution :
High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
4/1/1997 12:00:00 AM
Abstract :
We have studied reliability of 680-nm visible laser diodes (LDs) with a window-mirror structure formed by zinc-diffusion-induced disordering of GaInP quantum wells. Aging tests under the condition of CW output power in the range of 50-100 mW for ambient temperature from 40°C to 70°C have been carried out for 650-μm-long LDs and 900-μm-long LDs with three kinds of the front facet reflectivities (1.5%, 6% and 13%). In all tests, laser operation was stable for over 5000 h. For example, reliable 500-10000-h operation of the 900-μm LDs was realized under the conditions of output power of 50 mW at 70°C, 70 mW at 60°C, and 100 mW at 40°C for the first time. By various aging test results, dependence of the temperature and the output power on increase of the operating current has been investigated. Also, influences of the facet reflectivities and the cavity lengths on the reliability have been studied with focus on the optical power density and the current density. Consequently, it has been clarified that the degradation of the window LDs rather strongly depends on the operating current density than the optical power density. Moreover, it has been proven that the reliability of the window LDs is effectively improved by the reduction of the operating current density due to extension of the cavity length
Keywords :
III-V semiconductors; ageing; current density; gallium compounds; indium compounds; laser mirrors; laser reliability; laser transitions; life testing; optical windows; quantum well lasers; reflectivity; semiconductor device reliability; semiconductor device testing; 40 to 70 C; 50 to 100 mW; 5000 h; 5000 to 10000 h; 650 mum; 680 nm; 900 mum; CW output power; GaInP; GaInP QW laser reliability aging tests; GaInP quantum wells; aging tests; ambient temperature; cavity lengths; current density; facet reflectivities; front facet reflectivities; laser operation stability; mW CW operation; nm visible laser diodes; operating current; operating current density; optical power density; output power; reliability study; window-mirror structure; zinc-diffusion-induced disordering; Aging; Current density; Diode lasers; Laser stability; Power generation; Quantum well lasers; Reflectivity; Temperature dependence; Temperature distribution; Testing;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.605691