Optical gain for wurtzite GaN with anisotropic strain in c plane

Author

Domen, K. ; Horino, K. ; Kuramata, A. ; Tanahashi, T.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

3

Issue

2

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

450

Lastpage

455

Abstract

We calculated band structures of (11¯00)-oriented GaN with various strains. We found that introducing anisotropic strain in the c plane separates heavy hole and light hole bands. We also found that a tensile strain in the (11¯00) plane makes the light hole band topmost. These two effects result in a reduction in the density of states at the valence band edge. In this way, we can significantly reduce the transparent carrier density to generate gain

Keywords

III-V semiconductors; carrier density; gallium compounds; laser theory; semiconductor lasers; stimulated emission; tensile strength; valence bands; (11¯00)-oriented GaN; GaN; GaN semiconductor laser; anisotropic strain; band structures; c plane; density of states; heavy hole bands; light hole band; light hole bands; optical gain; tensile strain; transparent carrier density; valence band edge; wurtzite GaN; Anisotropic magnetoresistance; Capacitive sensors; Charge carrier density; Gallium nitride; Geometrical optics; Laser modes; Light emitting diodes; Optical films; Optical materials; Tensile strain;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.605692

Filename

605692