DocumentCode :
1357581
Title :
Localized Growth of Carbon Nanotubes on CMOS Substrate at Room Temperature Using Maskless Post-CMOS Processing
Author :
Zhou, Ying ; Johnson, Jason L. ; Ural, Ant ; Xie, Huikai
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
Volume :
11
Issue :
1
fYear :
2012
Firstpage :
16
Lastpage :
20
Abstract :
Carbon nanotubes (CNTs) have been successfully synthesized on foundry CMOS substrate using maskless post-CMOS surface micromachining and localized heating techniques. The integrated heater is directly made of gate polysilicon and suspended over a micromachined cavity for thermal isolation. The synthesized CNTs are connected to CMOS interconnect metal layers without the need of any metal deposition. It is experimentally verified that the electrical properties of the neighboring CMOS transistors are unchanged after CNT growth.
Keywords :
CMOS integrated circuits; carbon nanotubes; localised modes; nanofabrication; C; CMOS interconnect metal layer; CMOS substrate; CNT growth; carbon nanotube growth; electrical properties; gate polysilicon; localized heating technique; maskless post-CMOS processing; maskless post-CMOS surface micromachining; temperature 293 K to 298 K; thermal isolation; CMOS process; CMOS technology; Carbon nanotubes; Circuit synthesis; Foundries; Heating; Integrated circuit interconnections; Micromachining; Monolithic integrated circuits; Temperature; CMOS; Carbon nanotubes (CNTs); monolithic integration; nanotechnology;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2009.2037757
Filename :
5353709
Link To Document :
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