DocumentCode :
1357600
Title :
Effects of bandgap, lifetime, and other nonuniformities on diode laser thresholds and slope efficiencies
Author :
Vurgaftman, Igor ; Meyer, Jerry R.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Volume :
3
Issue :
2
fYear :
1997
fDate :
4/1/1997 12:00:00 AM
Firstpage :
475
Lastpage :
484
Abstract :
We examine the effect of various types of spatial nonuniformities on the performance of semiconductor diode lasers. Light versus current (L-I) characteristics are modeled by solving the coupled rate equations for the carrier density, photon density, carrier temperature, and lattice temperature. In cases of macroscopic nonuniformities, that is, when the fluctuation correlation length (ΛF) is longer than the carrier diffusion length (LD), the cavity is divided into a large number of segments, and separate rate equations are solved for each segment. Type-II antimonide quantum wells are used as the model diode laser system. Macroscopic nonuniformities of the nonradiative lifetime are shown to have little effect on the slope efficiency at high injection levels, but produce a signature softening of the threshold abruptness if the nonuniformity is large enough. This results from the nonuniformity of the carrier concentration and consequent mixture of gain and loss regions. For the case of microscopic bandgap fluctuations (LD≫ΛF), inhomogeneous broadening of the gain spectrum leads to an increase of the threshold current density, which is accompanied by only a small reduction of the efficiency. However, in the complementary limit of macroscopic bandgap fluctuations (LDF), the regions with distinct bandgaps become isolated, and photons emitted from the regions with larger bandgaps tend to be absorbed by the regions with smaller bandgaps. For an example with a Gaussian bandgap distribution of width σ=30 meV, the nonuniformities have the effect of increasing the threshold current by a factor of 2.6, while reducing the slope efficiency by a factor of 2. We also consider lateral nonuniformities due to the temporal instability of the lasing mode, which tend to have a rather modest effect on the threshold current, slope efficiency, and even on the maximum output power despite the severe degradation of the beam quality
Keywords :
carrier density; carrier lifetime; current density; energy gap; laser beams; laser modes; laser theory; nonradiative transitions; optical losses; quantum well lasers; semiconductor device models; Gaussian bandgap distribution; bandgap; carrier concentration; carrier density; carrier diffusion length; carrier temperature; cavity; coupled rate equations; diode laser thresholds; efficiency; fluctuation correlation length; gain region; high injection levels; inhomogeneous broadening; lattice temperature; lifetime; light versus current characteristics; loss region; macroscopic bandgap fluctuations; macroscopic nonuniformities; microscopic bandgap fluctuations; mid IR emission; nonradiative lifetime; nonuniformities; photon density; segments; semiconductor diode lasers; signature softening; slope efficiencies; slope efficiency; spatial nonuniformities; threshold current density; type-II antimonide quantum wells; Charge carrier density; Equations; Fluctuations; Laser modes; Optical coupling; Photonic band gap; Semiconductor diodes; Semiconductor lasers; Temperature; Threshold current;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/2944.605697
Filename :
605697
Link To Document :
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