The differential efficiency of quantum-well lasers

Author

Smowton, Peter M. ; Blood, Peter

Author_Institution

Dept. of Phys. & Astron., Univ. of Wales, Cardiff, UK

Volume

3

Issue

2

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

491

Lastpage

498

Abstract

We have analyzed the internal differential efficiency of quantum-well lasers in terms of current spreading, carrier injection into the well, and the radiative efficiency within the well. We quantify the first two of these processes by extracting information from spontaneous emission measurements as a function of device length, current, and temperature. We show that the carrier injection efficiency is responsible for the temperature dependence of the external differential efficiency of GaInP quantum-well (QW) lasers by comparing values from the slope of the laser power output versus current characteristic with our experimental values for current spreading and injection efficiency

Keywords

Fermi level; III-V semiconductors; carrier density; carrier lifetime; current density; gallium compounds; indium compounds; laser theory; quantum well lasers; spontaneous emission; GaInP; GaInP QW lasers; carrier injection; carrier injection efficiency; current characteristic; current dependence; current spreading; device length; external differential efficiency; injection efficiency; internal differential efficiency; laser power; quantum-well lasers; radiative efficiency; spontaneous emission measurements; temperature dependence; Current measurement; Extraterrestrial measurements; Laser modes; Length measurement; Power lasers; Quantum well lasers; Radiative recombination; Spontaneous emission; Stimulated emission; Temperature dependence;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.605699

Filename

605699