Title :
High reliability of high-power and widely tunable 1.55-μm distributed Bragg reflector lasers for WDM applications
Author :
Delorme, Franck ; Alibert, Guilhem ; Boulet, Pierre ; Grosmaire, Serge ; Slempkes, Serge ; Ougazzaden, Abdallah
Author_Institution :
CNET, Bagneux, France
fDate :
4/1/1997 12:00:00 AM
Abstract :
Single-mode operation with output power up to 100 mW is reported for the first time for InGaAsP-InP DBR lasers. These devices exhibiting a record 17-nm tuning range, have been realized using a three-step MOVPE process. The output power variations under tuning are limited to about 1.5 dB, and the tuning range remains quasiconstant with the output power. Using a two-wavelength DBR laser array with Bragg wavelengths spaced by 15 nm, 61 channels regularly spaced by 0.5 nm are accessible by controlling only two currents. Moreover systematic investigations of accelerated aging of these components have been realized for the first time. For all the tests performed on both active and tuning sections, no spectral degradations are observed, and the tunability remains unchanged. To define the lifetime of a tunable laser, e.g., a DBR laser, we propose a new failure criterion based on both active operating current and wavelength degradations. Using this criterion, the lifetime at 60°C is estimated to be more than 7·104 h, and is not limited by the wavelength degradation, but effectively by the operating current degradation
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser reliability; laser transitions; laser tuning; life testing; optical testing; optical transmitters; quantum well lasers; semiconductor device testing; semiconductor growth; vapour phase epitaxial growth; wavelength division multiplexing; μm distributed Bragg reflector lasers; 1.55 mum; 100 mW; 60 C; 7000 h; Bragg wavelengths; DBR laser; InGaAsP-InP; InGaAsP-InP DBR MQW lasers; WDM applications; accelerated aging; active operating current; active sections; failure criterion; high reliability; high-power; nm tuning range; operating current degradation; output power; output power variations; quasiconstant; single-mode operation; three-step MOVPE process; tuning range; tuning sections; two-wavelength DBR laser array; widely tunable; Degradation; Distributed Bragg reflectors; Epitaxial growth; Epitaxial layers; Laser tuning; Optical arrays; Optical control; Power generation; Power lasers; Tunable circuits and devices;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.605712