Title :
Numerical physics of subpicosecond electrical pulse generation by nonuniform gap illumination
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
fDate :
9/1/1996 12:00:00 AM
Abstract :
The physical mechanism of subpicosecond electrical pulse generated by nonuniform illumination of transmission-line gaps is studied in detail using a two-dimensional numerical model. This model agrees very well with existing theories as well as experimental observations and further explains the observed highly nonuniform field distributions, which have been neglected in previous theories. The pulse dependence on light intensity, bias voltage, substrate doping, and beam size and location are studied and discussed. It also confirms that this mechanism should be observable in silicon
Keywords :
Monte Carlo methods; high-speed optical techniques; integrated optics; photoconducting devices; pulse generators; semiconductor doping; substrates; beam location; beam size; bias voltage; highly nonuniform field distributions; light intensity; nonuniform gap illumination; nonuniform illumination; numerical physics; photoconducting devices; physical mechanism; pulse dependence; silicon; subpicosecond electrical pulse generation; substrate doping; transmission-line gaps; two-dimensional numerical model; Lighting; Monte Carlo methods; Numerical simulation; Optical propagation; Photoconducting materials; Physics; Poisson equations; Pulse generation; Silicon; Transmission lines;
Journal_Title :
Quantum Electronics, IEEE Journal of
