Title :
Passive temperature compensation of uncooled GaInAsP-InP diode lasers using thermal stress
Author :
Cohen, Daniel A. ; Coldren, Larry A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
4/1/1997 12:00:00 AM
Abstract :
Strain arising from differential thermal expansion may be used to compensate the effects of rising temperature and stabilize the operating properties of diode lasers. We have demonstrated this using a 1.58-μm GaInAsP-InP multiquantum-well (MQW) laser mounted on a bimetallic heatsink, obtaining nearly complete stabilization of the modal wavelength and a threshold current equivalent characteristic temperature of 133 K over the temperature range of 20°C to 70°C. The results are successfully modeled by a gain calculation that considers the effects of strain produced by both lattice-mismatched epitaxy and external uniaxial stress
Keywords :
III-V semiconductors; compensation; current density; gallium arsenide; heat sinks; indium compounds; laser frequency stability; laser modes; laser theory; laser transitions; physical instrumentation control; quantum well lasers; semiconductor device models; temperature control; thermal expansion; thermal stresses; 1.58 mum; 133 K; 20 to 70 degC; GaInAsP-InP; GaInAsP-InP multiquantum-well laser; bimetallic heatsink; differential thermal expansion; external uniaxial stress; gain calculation; lattice-mismatched epitaxy; modal wavelength; operating properties; passive temperature compensation; rising temperature effects; strain; thermal stress; threshold current equivalent characteristic temperature; uncooled GaInAsP-InP diode lasers; Capacitive sensors; Diode lasers; Laser modes; Laser stability; Quantum well devices; Semiconductor process modeling; Temperature distribution; Thermal expansion; Threshold current; Uniaxial strain;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.605717
