DocumentCode :
1357790
Title :
Highly reliable and stable-lateral-mode operation of high-power 0.98-μm InGaAs-InGaAsP lasers with an exponential-shaped flared stripe
Author :
Sagawa, Misuzu ; Hiramoto, Kiyohisa ; Toyonaka, Takashi ; Kikawa, Takeshi ; Fujisaki, Sumiko ; Uomi, Kazuhisa
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Volume :
3
Issue :
2
fYear :
1997
fDate :
4/1/1997 12:00:00 AM
Firstpage :
666
Lastpage :
671
Abstract :
A 0.98-μm InGaAs-InGaAsP-GaAs strained quantum-well (QW) laser with an exponential-shaped flared stripe is proposed for high-power, highly reliable operation. The stripe width is wider at the front facet to reduce the optical density by widening the spot size. The stripe width is narrower at the rear facet for stable lateral-mode operation. The stripe width in the transient region is varied exponentially along the cavity for smooth mode transformation. We showed that this structure expands the spot size effectively without any deterioration in stable lateral-mode operation. The kink-occurrence output power is determined only by the stripe width at the rear facet, and the spot size at the front facet is a function only of the stripe width at the front facet. The maximum output power is 40-60% higher than that of ordinary straight-stripe lasers for the same kink-occurrence output power. Testing at 150 mW showed stable operation with an estimated lifetime of more than 200000 h at 25°C
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; laser reliability; life testing; quantum well lasers; semiconductor device testing; waveguide lasers; 0.98 mum; 150 mW; 200000 h; 25 degC; InGaAs-InGaAsP; InGaAs-InGaAsP-GaAs strained quantum-well laser; cavity; estimated lifetime; exponential-shaped flared stripe; front facet; high-power; high-power 0.98-μm InGaAs-InGaAsP lasers; highly reliable operation; kink-occurrence output power; maximum output power; optical density; rear facet; smooth mode transformation; spot size widening; stable-lateral-mode operation; stripe width; testing; transient region; Diode lasers; Fiber lasers; Laser stability; Optical distortion; Optical fiber communication; Optical materials; Power generation; Quantum well lasers; Semiconductor lasers; Semiconductor materials;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/2944.605719
Filename :
605719
Link To Document :
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