DocumentCode
135797
Title
The prospects and challenges in junction process technology for advanced semiconductor devices
Author
Suguro, Kyoichi
Author_Institution
Adv. Discrete Dev. Center, Toshiba Corp. Semicond. & Storage Products Co., Nomi, Japan
fYear
2014
fDate
June 26 2014-July 4 2014
Firstpage
1
Lastpage
3
Abstract
Historical background of ion implantation technology in semiconductor devices is reviewed in conjunction with electrical activation of impurity atoms, annealing of primary defects introduced during ion implantation as well as the diffusion of impurity atoms. Next the prospects and challenges in junction process technology for advanced semiconductor devices are discussed.
Keywords
annealing; impurities; ion implantation; semiconductor devices; semiconductor junctions; advanced semiconductor devices; electrical activation; impurity atom diffusion; ion implantation technology; junction process technology; primary defect annealing; Annealing; Crystals; Doping; Impurities; Ion implantation; Plasma temperature; Silicon; annealing; defects; diffusion; electrical activation; ion implantation; material modification;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location
Portland, OR
Type
conf
DOI
10.1109/IIT.2014.6939767
Filename
6939767
Link To Document