Design and evaluation of a novel enhancement mode FET logic gate configuration in AlGaAs/GaAs/AlGaAs quantum well HEMT technology

Author

Bushehri, E. ; Thiede, A. ; Bratov, V. ; Staroselsky, V. ; Rieger-Motzer, M. ; Huelsmann, A. ; Schlichter, T. ; Raynor, B.

Author_Institution

Microelectron. Centre, Middlesex Univ., London, UK

Volume

144

Issue

4

fYear

1997

fDate

8/1/1997 12:00:00 AM

Firstpage

243

Lastpage

246

Abstract

Evaluation of a high-performance logic gate configuration, utilising enhancement mode field effect transistors, is presented in AlGaAs/GaAs/AlGaAs quantum well HEMT technology. The performance of the gate in terms of speed, based on frequency divider measurements, shows a very high-speed operation achieved by utilising the bootstrap effect in the operation of the logic gate. The gate is suitable for the implementation of ultra-high-speed LSI circuits where high speed and noise margin are of critical importance

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; bootstrap circuits; field effect logic circuits; gallium arsenide; integrated circuit noise; large scale integration; logic gates; semiconductor quantum wells; AlGaAs-GaAs-AlGaAs; bootstrap effect; enhancement mode FET logic gate configuration; frequency divider measurements; noise margin; quantum well HEMT technology; ultra-high-speed LSI circuits;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:19971145

Filename

605781