• DocumentCode
    1358334
  • Title

    Long-Endurance Nanocrystal \\hbox {TiO}_{2} Resistive Memory Using a TaON Buffer Layer

  • Author

    Cheng, C.H. ; Chen, P.C. ; Wu, Y.H. ; Yeh, F.S. ; Chin, Albert

  • Author_Institution
    Dept. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • Volume
    32
  • Issue
    12
  • fYear
    2011
  • Firstpage
    1749
  • Lastpage
    1751
  • Abstract
    Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN resistive random access memory (RRAM) showed forming-free resistive switching, self compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 1010 cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.
  • Keywords
    germanium compounds; nickel; random-access storage; tantalum compounds; titanium compounds; Ni-GeO-TiO2-TaON-TaN; RRAM; flash memory; forming-free resistive switching; long-endurance nanocrystal resistive memory; nanocrystal buffer layer; resistive random access memory; self-compliance set-reset currents; Current measurement; Electrodes; Flash memory; Nickel; Resistance; Switches; Very large scale integration; $hbox{TiO}_{2}$; $hbox{GeO}_{2}$; hopping conduction; resistive random access memory (RRAM);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2168939
  • Filename
    6058577
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1358334