Correction to “205-GHz (Al,In)N/GaN HEMTs” [Sep 10 957-959]
Volume :
31
Issue :
11
fYear :
2010
Firstpage :
1320
Lastpage :
1320
Abstract :
In the above titled paper (ibid., vol. 31, no. 9, pp. 957-959, Sep. 10), the name of one of the authors was incorrectly typeset. The second-to-last author´s name is Nicholas Grandjean.
Keywords :
Aluminum compounds; Gallium compounds; HEMTs; Indium compounds; Millimeter wave transistors; Wide band gap semiconductors;
