Title :
Experimental Demonstration of Novel High-Voltage Epilayer RESURF GaN MOSFET
Author :
Huang, Weixiao ; Chow, T. Paul ; Niiyama, Yuki ; Nomura, Takehiko ; Yoshida, Seikoh
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
We report on the experimental demonstration of a novel n-channel GaN epilayer RESURF GaN MOSFET with good tradeoff between breakdown voltage and specific on-resistance for the first time. Device with 4-mum channel length and 16-mum RESURF length has breakdown voltage up to 730 V with specific on-resistance 34 mOmegamiddotcm2 (VG - VT = 20 V), best reported to date.
Keywords :
III-V semiconductors; MOSFET; gallium compounds; semiconductor device breakdown; GaN; MOSFET; breakdown voltage; high-voltage n-channel epilayer RESURF; size 16 mum; size 4 mum; specific on-resistance; voltage 730 V; Epilayer RESURF; MOSFET; gallium nitride; high voltage; n-channel;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2027820
