InGaAs/GaAs Core–Shell Nanowires Grown by Molecular Beam Epitaxy

Author

Jabeen, Fauzia ; Grillo, Vincenzo ; Martelli, Faustino ; Rubini, Silvia

Author_Institution

Sincrotrone Trieste & with TASC Lab., INFM-CNR, Trieste, Italy

Volume

17

Issue

4

fYear

2011

Firstpage

794

Lastpage

800

Abstract

Au-catalyzed InxGa_1-xAs nanowires (NWs) and InxGa_1-xAs/GaAs core-shell NWs were grown by molecular beam epitaxy on (1 1 1)B GaAs. The effects of In content, growth temperature, and V/III elemental flux ratios on NW morphology have been investigated. The structure of the NWs has been characterized by SEM and transmission electron microscopy and their optical properties by low-temperature photoluminescence.

Keywords

III-V semiconductors; catalysts; crystal morphology; gallium arsenide; gold; indium compounds; molecular beam epitaxial growth; nanowires; optical properties; photoluminescence; scanning electron microscopy; semiconductor growth; semiconductor quantum wires; transmission electron microscopy; Au; Au-catalyzed nanowires; InGaAs-GaAs; NW morphology; SEM; V/III elemental flux ratios; core-shell nanowires; growth temperature; low-temperature photoluminescence; molecular beam epitaxy; optical properties; transmission electron microscopy; Gallium; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Substrates; Wires; Electron microscopy; nanotechnology; optical spectroscopy; semiconductor growth; semiconductor heterojunctions;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2010.2068279

Filename

5607281