DocumentCode :
1358922
Title :
A 64-site multishank CMOS low-profile neural stimulating probe
Author :
Kim, Changhyun ; Wise, Kensall D.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume :
31
Issue :
9
fYear :
1996
fDate :
9/1/1996 12:00:00 AM
Firstpage :
1230
Lastpage :
1238
Abstract :
Describes a low-profile micromachined CMOS probe for multisite stimulation and recording in the central nervous system. The probe uses flexible silicon interconnects to allow the signal processing portion of the probe to fold at right angles to the penetrating probe shanks, limiting the implanted profile above the cortex to less than 1 mm. The probe is designed to stimulate a 4 mm3 volume of neural tissue with a spatial resolution of 400 μm using 1000 μm2 electrode sites. Eight of the 64 sites on the probe can be driven simultaneously over a current range from -127 μA to +127 μA with 1 μA resolution. An on-chip preamplifier allows the neural activity on any selected site to be recorded with an overall gain of 30 and bandwidth from 50 Hz to 9 kHz. The probe operates with a stimulus current linearity of 0.98 up to clock frequencies as high as 5 MHz and dissipates less than 15 μA in standby from ±5 V supplies
Keywords :
CMOS integrated circuits; bioelectric phenomena; biomedical electronics; neurophysiology; probes; -127 to 127 muA; -5 to 5 V; 1 mm; 5 MHz; 50 Hz to 9 kHz; 64-site multishank CMOS low-profile neural stimulating probe; central nervous system; clock frequencies; cortex; implanted profile; low-profile micromachined CMOS probe; multisite stimulation; on-chip preamplifier; stimulus current linearity; Bandwidth; Central nervous system; Electrodes; Limiting; Linearity; Preamplifiers; Probes; Signal processing; Silicon; Spatial resolution;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.535406
Filename :
535406
Link To Document :
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