A 1.2-GS/s 8-b silicon bipolar track & hold IC

Author

Prégardier, Bernd ; Langmann, Ulrich ; Hillery, William J.

Author_Institution

Lehrstuhl fur Elektron. Bauelemente, Ruhr-Univ., Bochum, Germany

Volume

31

Issue

9

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

1336

Lastpage

1339

Abstract

An Si bipolar all-NPN track & hold (T&H) IC is presented for operation up to 2 GS/s. It is based on a switched emitter-follower design. The total harmonic distortion is less than -52.4 dB, corresponding to 8.4 b, up to 1.2 GS/s over the full Nyquist band. Fabricated in a 25 GHz f_T 0.4 μm emitter width production technology, the IC consumes 460 mW, excluding the test buffer. The transistor count is 67. The T&H lends itself as a building block for multistage high-speed 8-b A/D-converters

Keywords

analogue processing circuits; analogue-digital conversion; bipolar analogue integrated circuits; elemental semiconductors; harmonic distortion; sample and hold circuits; silicon; 0.4 micron; 25 GHz; 460 mW; A/D converters; ADC building block; Si; Si bipolar track/hold IC; THD; multistage high-speed ADC; switched emitter-follower design; total harmonic distortion; Bipolar integrated circuits; Bipolar transistors; Clocks; Gallium arsenide; Integrated circuit testing; Sampling methods; Schottky diodes; Signal resolution; Silicon; Switches;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.535420

Filename

535420