DocumentCode
1359095
Title
Wafer Bonded Subwavelength Metallo-Dielectric Laser
Author
Bondarenko, O. ; Simic, A. ; Gu, Q. ; Lee, J.H. ; Slutsky, B. ; Nezhad, M.P. ; Fainman, Y.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
Volume
3
Issue
3
fYear
2011
fDate
6/1/2011 12:00:00 AM
Firstpage
608
Lastpage
616
Abstract
Light sources that are compatible with the silicon photonics platform are the key elements needed for photonic integrated circuits on silicon. Here, we report optically pumped wafer bonded metallodielectric lasers, subwavelength in all three dimensions (250-nm gain core radius) operating at 77 K, as well as near-subwavelength (450-nm gain core radius) operating at room temperature.
Keywords
elemental semiconductors; integrated optics; optical pumping; semiconductor lasers; silicon; wafer bonding; Si; light sources; optically pumped lasers; photonic integrated circuits; silicon photonics; temperature 293 K to 298 K; temperature 77 K; wafer bonded subwavelength metallodielectric laser; Nanostructures; Semiconductor lasers; Semiconductor lasers; engineered photonic nanostructures; fabrication and characterization; nanocavities; nanostructures; subwavelength structures;
fLanguage
English
Journal_Title
Photonics Journal, IEEE
Publisher
ieee
ISSN
1943-0655
Type
jour
DOI
10.1109/JPHOT.2011.2146763
Filename
6058713
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