Title :
A 12.3-mW 12.5-Gb/s Complete Transceiver in 65-nm CMOS Process
Author :
Fukuda, Koji ; Yamashita, Hiroki ; Ono, Goichi ; Nemoto, Ryo ; Suzuki, Eiichi ; Masuda, Noboru ; Takemoto, Takashi ; Yuki, Fumio ; Saito, Tatsuya
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Tokyo, Japan
Abstract :
A 12.3-mW 12.5-Gb/s complete transceiver based on the 65-nm standard digital CMOS process was developed. The chip includes a clock-and-data-recovery (CDR) device, a multiplexer/demultiplexer (MUX/DEMUX), and a global clock-distribution network. To reduce power consumption, a low-swing voltage-mode driver with pulse-current boosting and an LC resonant-clock distribution with distributed on-chip inductors are used in the transmitter, while a symbol-rate phase detector (SPD) using a three-stage sense amplifier and phase-rotating phase-locked loop (PLL) with variable delay are used in the receiver. The transceiver operates at a bit error rate (BER) of 10-12 or less through a 20-cm test board with total attenuation of -12.1 dB while consuming power of 0.98 mW/(Gb/s) per transceiver.
Keywords :
CMOS integrated circuits; phase locked loops; transceivers; bit error rate; clock-and-data-recovery device; consuming power; distributed on-chip inductor; global clock-distribution network; low-swing voltage-mode driver; multiplexer/demultiplexer; phase-rotating phase locked loop; power 12.3 mW; power consumption; pulse-current boosting; sense amplifier; size 65 nm; standard digital CMOS process; symbol-rate phase detector; transceiver; transmitter; variable delay; CMOS technology; Detectors; Driver circuits; Multiplexing; Receivers; Transceivers; Transmitters; Low power; serial link; transceiver;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2010.2075410