Effects of rapid thermal annealing on InAsP/InP strained multiquantum well laser diodes grown by metal organic chemical vapour deposition

Author

Chong-Yi Lee ; Wu, Meng-Chyi ; Tian, Ya-De ; Wang, Wei-Han ; Ho, Wen-Jeng ; Shi, Tian-Tsorng

Author_Institution

Res. Inst. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

36

Issue

12

fYear

2000

fDate

6/8/2000 12:00:00 AM

Firstpage

1026

Lastpage

1028

Abstract

The authors report on the effect of rapid thermal annealing (RTA) on the performance of InAsP/InP strained multiquantum well (SMQW) laser diodes (LDs) grown by metal organic chemical vapour deposition. From the photoluminescence (PL) measurements, the optimal RTA temperature for the InAsP/InP strained single quantum well (SSQW) stack was found to be 700°C. The 700°C annealed SSQW stack was found to have a stronger PL peak intensity, no halfwidth broadening and small peak shift, indicating that the degree of interdiffusion of group-V elements can be much reduced. The threshold current and slope efficiency of the 700°C RTA SMQW LDs can be reduced significantly as compared to those of as-grown LDs

Keywords

III-V semiconductors; MOCVD; chemical interdiffusion; chemical vapour deposition; indium compounds; laser beams; optical fabrication; photoluminescence; quantum well lasers; rapid thermal annealing; ridge waveguides; spectral line broadening; spectral line intensity; spectral line shift; vapour phase epitaxial growth; waveguide lasers; 700 C; InAsP-InP; InAsP/InP; as-grown LDs; group-V elements; halfwidth broadening; interdiffusion; metal organic chemical vapour deposition; optimal rapid thermal annealing temperature; peak shift; photoluminescence; photoluminescence peak intensity; rapid thermal annealing; slope efficiency; strained multiquantum well laser diodes; strained single quantum well stack; threshold current;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20000761

Filename

852179