Title :
Blue light emitting diode based on p+-BeTe/n+-ZnSe ESAKI tunnelling heterojunction
Author :
Reuscher, G. ; Landwehr, G. ; Keim, M. ; Lugauer, H.-J. ; Fischer, F. ; Waag, A.
Author_Institution :
Phys. Inst. EPIII, Wurzburg Univ., Germany
fDate :
6/8/2000 12:00:00 AM
Abstract :
The authors report the realisation of an ESAKI-reverse-injection-concept (ERIC) device using Be chalcogenides. A blue light emitting diode is described based on an ERIC electron-to-hole conversion in front of the waveguide, avoiding p-cladding. The I-V-characteristics show a current density of 1 kA/cm2 at 12.3 V under forward bias and a negative differential resistance (NDR) with a peak-to-valley ratio (PVR) of 8.6:1 under reverse bias at room temperature. The electroluminescence at room temperature at an energy corresponding to the ZnSe active region proves the applicability of the concept
Keywords :
II-VI semiconductors; beryllium compounds; current density; electroluminescent devices; light emitting diodes; optical fabrication; optical waveguide components; p-n heterojunctions; tunnelling; zinc compounds; 12.3 V; 298 K; Be chalcogenides; BeTe-ZnTe; ERIC electron-to-hole conversion; ESAKI tunnelling heterojunction; ESAKI-reverse-injection-concept device; I-V-characteristics; ZnSe active region; blue light emitting diode; current density; electroluminescence; energy; forward bias resistance; negative differential resistance; p-cladding; p+-BeTe/n+-ZnSe; peak-to-valley ratio; reverse bias; room temperature; waveguide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000738
