• DocumentCode
    1359294
  • Title

    Solid-state circuits: Gallium arsenide spawns speed: Monolithic digital circuits employing `MESFET¿ devices promise multigigabit and higher data rates

  • Author

    Tuyl, R.V. ; Liechti, C.

  • Author_Institution
    Hewlett-Packard, Palo Alto, CA, USA
  • Volume
    14
  • Issue
    3
  • fYear
    1977
  • fDate
    3/1/1977 12:00:00 AM
  • Firstpage
    41
  • Lastpage
    48
  • Abstract
    Monolithic digital circuits employing `MESFET´ devices promise multigigabit and higher data rates. The basic operation of MESFET is described.
  • Keywords
    Schottky gate field effect transistors; digital integrated circuits; field effect integrated circuits; GaAs MESFET; monolithic digital IC; subnanosecond logic; Capacitance; Gallium arsenide; Logic gates; MESFETs; Silicon; Switches; Switching circuits;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/MSPEC.1977.6369350
  • Filename
    6369350
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1359294