Title :
High performance InGaP/GaAs HBTs for mobile communications
Author :
Achouche, M. ; Spitzbart, T. ; Kurpas, P. ; Brunner, F. ; Würfl, J. ; Tränkle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochfrequenztech., Berlin, Germany
fDate :
6/8/2000 12:00:00 AM
Abstract :
High performance InGaP/GaAs heterojunction bipolar transistors (HBTs) with a maximum DC current gain of >100 and fmax>120 GHz (3×30 μm2 emitter area) have been developed using production-like processes (4 inch wafers, i-line stepper lithography). The fabricated L-band low voltage (⩾2 V) power cell HBTs with 12×3×30 μm2 emitter area have a 1 W output power with >63% power added efficiency at 3 V operating bias and 2 GHz
Keywords :
III-V semiconductors; UHF bipolar transistors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power transistors; mobile communication; power bipolar transistors; semiconductor device reliability; 1 W; 120 GHz; 2 GHz; 2 V; 3 V; 4 in; 63 percent; InGaP-GaAs; L-band low voltage power cell HBTs; heterojunction bipolar transistors; high performance InGaP/GaAs HBTs; i-line stepper lithography; maximum DC current gain; maximum frequency of oscillation; mobile communications; operating bias; output power; power HBT process; power added efficiency; production-like processes; reliability testing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000782
